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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-220 package Complement to PNP type : 2N6124 ;2N6125 ;2N6126 APPLICATIONS For use in power amplifier and switching circuit applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2N6121 2N6122 2N6123 Absolute maximum ratings(Ta=25ae ) SYMBOL PARAMETER 2N6121 2N6122 VCBO Collector-base voltage VCEO Collector-emitter voltage IN CHA NG S 2N6123 2N6121 2N6122 2N6123 Open emitter OND MIC E CONDITIONS TOR UC VALUE 45 60 80 45 60 80 UNIT V Open base V VEBO IC ICM IB PT Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature Open collector 5 4 8 1 V A A A W ae ae TC=25ae 40 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 3.125 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2N6121 VCEO(SUS) Collector-emitter sustaining voltage 2N6122 2N6123 VCEsat-1 VCEsat-2 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage 2N6121 ICEX Collector cut-off current 2N6122 2N6123 IC=1.5A;IB=0.15A IC=4.0A;IB=1.0A IC=1.5A ; VCE=2V VCE=45V;VBE=1.5V TC=125ae VCE=60V;VBE=1.5V TC=125ae VCE=80V;VBE=1.5V TC=125ae VCE=45V;IB=0 VCE=60V;IB=0 VCE=80V;IB=0 VEB=5V; IC=0 IC=0.1A ;IB=0 SYMBOL 2N6121 2N6122 2N6123 CONDITIONS MIN 45 60 80 TYP. MAX UNIT V 0.6 1.4 1.2 0.1 2.0 0.1 2.0 0.1 2.0 V V V mA ICEO Collector cut-off current 2N6121 2N6122 2N6123 IEBO Emitter cut-off current hFE-1 DC current gain INC NG S HA 2N6121 2N6122 2N6123 2N6121 2N6122 2N6123 CON EMI TOR DUC 1.0 1.0 25 100 20 80 mA mA IC=1.5A ; VCE=2V 10 hFE-2 DC current gain IC=4A ; VCE=2V 7 IC=1A ; VCE=4V 2.5 MHz fT Transition frequency 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6121 2N6122 2N6123 NG S HA INC Fig.2 Outline dimensions(unindicated tolerance:A CON EMI TOR DUC 0.10 mm) 3 |
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